The result confirmed which the Commonly-off Procedure was achieved in Al2O3/SiO2 diamond equipment. The MOSFET device by using a SiO2 layer reveals the Generally-off Procedure achieved at Vth�? − three.5 V that is definitely suited to electricity product application, as revealed in Fig. 1c. The Vth worth is determined https://spencerhwxlz.blogozz.com/14713984/2d圖面-options